a p09n90cw-hf advanced power n-channel enhancement mode electronics corp. power mosfet minimize on-resistance bv dss 900v fast switching r ds(on) 1.4 simple drive requirement i d 7.6a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 drain current, v gs @ 10v a i d @t c =100 drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 0.6 /w rthj-a maximum thermal resistance, junction-ambient 40 /w data & specifications subject to change without notice linear derating factor 1.6 25 208 7.6 + 30 parameter rating 900 4.8 201501125 halogen-free product storage temperature range -55 to 150 -55 to 150 parameter 1 g d s g d s to-3p ap09n90c series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-3p package is widely preferred for commercial-industrial surface mount applications and suited for higher voltage applications such as smps.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 900 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.74 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =3.6a - 1.25 1.4 ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =3.6a - 3.6 - s i dss drain-source leakage current v ds =900v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =720v , v gs =0v - - 500 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge i d =7.2a - 50.7 80 nc q gs gate-source charge v ds =540v - 12 - nc q gd gate-drain ("miller") charge v gs =10v - 16 - nc t d(on) turn-on delay time v dd =450v - 20 - ns t r rise time i d =7.2a - 16 - ns t d(off) turn-off delay time r g =6.8 -65- ns t f fall time v gs =10v - 27 - ns c iss input capacitance v gs =0v - 3097 5000 pf c oss output capacitance v ds =15v - 516 - pf c rss reverse transfer capacitance f=1.0mhz - 19 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =7.2a, v gs =0v - - 1.5 a t rr reverse recovery time i s =7.2a, v gs =0v, - 673 - ns q rr reverse recovery charge di/dt=100a/s - 9.6 - c notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. reliability, function or design. 2 ap09n90cw-hf apec reserves the right to make changes without further notice to any products herein to improve
a p09n90cw-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd , source-to-drain voltage (v) i s (a) t j = 150 o ct j = 25 o c 1 2 3 4 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) 0 1 2 3 4 5 024681012141618 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v 10v 7.0v 5.0v 4.5v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =3.6a 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 junction temperature ( o c) normalized bv dss 0 2 4 6 8 10 024681012141618 v ds , drain-to-source voltage (v) i d , drain current (a) v g =4.0v 4.5v 10v 7.0v 5.0v t c =25 o c
ap09n90cw-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0 3 6 9 12 15 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =180v v ds =360v v ds =540v i d =7.2a 10 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss 0.1 1 10 100 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse
ap09n90cw-hf marking information 5 part numbe r 09n90cw ywwsss date code (ywwsss) y last digit of the year ww week sss sequence package code
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